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高溫退火氣氛對薄規(guī)格中溫取向硅鋼二次再結(jié)晶行為的影響
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更新時間：2015-09-24
通過調(diào)整最終退火保護(hù)氣氛來控制 0.18 mm 厚含 Cu 中溫取向硅鋼二次再結(jié)晶時抑制劑的熟化和分解行為, 從而達(dá)到提高二次再結(jié)晶后Goss 織構(gòu)鋒銳度和磁性能的目的. 運用 EBSD 系統(tǒng)觀察和分析二次再結(jié)晶中斷抽出試樣的組織和取向.
高溫退火氣氛對薄規(guī)格中溫取向硅鋼二次再結(jié)晶行為的影響EFFECT OF FINAL ANNEALING ATMOSPHERE ON SECONDARY?RECRYSTALLIZATION BEHAVIOR IN THIN GAUGE MEDIUM?TEMPERATURE GRAIN ORIENTED SILICON STEEL?
通過調(diào)整最終退火保護(hù)氣氛來控制 0.18 mm 厚含 Cu 中溫取向硅鋼二次再結(jié)晶時抑制劑的熟化和分解行為, 從而達(dá)到提高二次再結(jié)晶后Goss 織構(gòu)鋒銳度和磁性能的目的. 運用 EBSD 系統(tǒng)觀察和分析二次再結(jié)晶中斷抽出試樣的組織和取向. 結(jié)果表明: 提高高溫退火氣氛中的 N2比例至90%, 最終0.18 mm規(guī)格成品磁感值達(dá)1.95 T. 成品減薄后樣品中抑制劑的粗化行為受氣氛的影響更為強烈, 表現(xiàn)在提高N2比例后初次晶粒尺寸減小,?二次再結(jié)晶持續(xù)時間延長, 此時Goss晶粒擁有足夠的時間發(fā)生異常長大以獲得尺寸優(yōu)勢, 從而抑制偏轉(zhuǎn)Goss取向晶粒的異常長大, 提高了Goss 織構(gòu)的鋒銳度和薄規(guī)格成品的最終磁性能.
The development trend of grain oriented silicon steel is reducing the slab reheating temperature and?the thickness of final product. Medium temperature slab reheating grain oriented silicon steel bearing copper was?characterized by omitting hot band annealing and larger range of secondary cold rolling reduction which was?suitable for the preparation of thin gauge product. But less research were reported about thin gauge grain oriented?silicon steel produced by medium temperature reheat technique. It was well known that the sharpness of?secondary recrystallization Goss texture is deteriorated by the preparation of 0.18 mm thin gauge grain oriented?silicon steel, poor secondary recrystallization and deviated Goss grains occurs by the influence of Goss seed?decreasing and inhibitor decrease. So the key point of producing thin gauge grain oriented silicon steel was?controlling the precipitations ageing behavior. In order to improve the sharpness of Goss texture and the magnetic?flux density after secondary recrystallization, secondary recrystallization behavior was controlled by annealing?atmosphere in this work. The microstructure and texture of interrupted annealing specimens were measured by?EBSD system. The results show that the magnetic flux density of 0.18 mm gauge specimen was 1.95 T after final?annealing in 90%N2 atmosphere. Due to the coarsening behavior of inhibitors was more strongly influenced by?atmosphere in thin gauge silicon steel, the primary recrystallization grain size was smaller and secondary?recrystallization duration was longer by improving volume fraction of N2 during final annealing. In this condition,?deviated Goss grains were inhibited while Goss grains have enough time for abnormal growth. As a result, sharp?Goss texture and stable secondary recrystallization were guaranteed and high magnetic flux density of thin gauge?final product was obtained.?
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